Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

被引：203

作者：

Lester, LF ^{[1
]}

Stintz, A ^{[1
]}

Li, H ^{[1
]}

Newell, TC ^{[1
]}

Pease, EA ^{[1
]}

Fuchs, BA ^{[1
]}

Malloy, KJ ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 08期

关键词：

epitaxial growth; quantum dots; semiconductor laser;

D O I：

10.1109/68.775303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm(-1) in the ground state. Room temperature threshold current densities as low as 83 A/cm(2) for uncoated 1.24-mu m devices are measured, and operating wavelengths over a 190-nm span are demonstrated.

引用

页码：931 / 933

页数：3

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