Pressure and partial wetting effects on superhydrophobic friction reduction in microchannel flow

Friction reduction in microchannel flows can help alleviate the inherently taxing pumping power requirements associated with the dimensions involved. One possible way of achieving friction reduction is through the introduction of surface microtexturing that can lead to a superhydrophobic Cassie-Baxter state. The Cassie-Baxter state is characterized by the presence of air pockets within the surface microtexturing believed to act as an effective "shear free" (or at least shear reduced) layer, decreasing the overall friction characteristics of the surface. Most work in this area has concentrated on optimizing the surface microtexturing geometry to maximize the friction reduction effects and overall stability of the Cassie-Baxter state. However, less attention has been paid to the effects of partially wetted conditions induced by pressure and the correlation between the liquid-gas interface location within the surface microtexturing and the microchannel flow characteristics. This is mainly attributed to the difficulty in tracking the interface shape and location within the microtexturing in the typical top-down view arrangements used in most studies. In this paper, a rectangular microchannel with regular microtexturing on the sidewalls is used to visualize and track the location of the air-water interface within the roughness elements. While visually tracking the wetting conditions in the microtextures, pressure drops versus flow rates for each microchannel are measured and analyzed in terms of the non-dimensional friction coefficient. The frictional behavior of the Poiseuille flow suggests that (1) the air-water interface more closely resembles a no-slip boundary rather than a shear-free one, (2) the friction is rather insensitive to the degree of microtexturing wetting, and (3) the fully wetted (Wenzel state) microtexturing provides lower friction than the non-wetted one (Cassie state), in corroboration with observations (1) and (2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767469]