Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs

被引:58
|
作者
Romeo, PR
Van Campenhout, J
Regreny, P
Kazmierczak, A
Seassal, C
Letartre, X
Hollinger, G
Van Thourhout, D
Baets, R
Fedeli, M
Di Cioccio, L
机构
[1] Ecole Cent Lyon, Lab Elect Microelect & Microsyst, LEOM, F-69134 Ecully, France
[2] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium
[3] CEA, DRT, LETI, F-38054 Grenoble 9, France
关键词
D O I
10.1364/OE.14.003864
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/ n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA. (c) 2006 Optical Society of America.
引用
收藏
页码:3864 / 3871
页数:8
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