Influence of trapped charges on low-level leakage current in thin silicon dioxide films

被引：0
|
作者：
Chen, TP [1 ]
Luo, YL [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, experiments were designed to examine the influence of the trapped charges on SILC in thin SiO2 films. It is shown that the release of the trapped electrons in the gate(oxide interface region during the IN measurement could be responsible for the negative-differential-resistance current at low fields. It is also shown that the positive trapped charges could enhance the DC component of the SILC.
引用
收藏
页码：974 / 977
页数：4
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