Low threshold 1.55 mu m wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

被引：24
|
作者：
Carlin, JF
Syrbu, AV
Berseth, CA
Behrend, J
Rudra, A
Kapon, E
机构：
[1] Inst. de Micro- et Optoelectronique, Département de Physique, Ecl. Polytech. Federale de Lausanne
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 01期
关键词：
D O I：
10.1063/1.119453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. Moreover, up to 17 quantum wells were integrated in a strain-balanced laser, which showed equally good characteristics. (C) 1997 American Institute of Physics.
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页码：13 / 15
页数：3
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