Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors

被引：40
|
作者：
Taalat, Rachid [1 ]
Rodriguez, Jean-Baptiste [1 ]
Delmas, Marie [1 ]
Christol, Philippe [1 ]
机构：
[1] Univ Montpellier 2, Inst Elect Sud, UMR CNRS 5214, F-34095 Montpellier 5, France
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2014年 / 47卷 / 01期
关键词：
type-2 InAs/GaSb superlattice; infrared photodetection;
D O I：
10.1088/0022-3727/47/1/015101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared photodiodes with different periods were investigated. Three devices with different SL periods, but the same cut-off wavelength at 5 mu m at 77 K, were grown by molecular beam epitaxy on p-type GaSb substrates. The optical and electrical behaviours were characterized and analysed. Our investigations show strong influence of the SL composition on both the material properties and photodetector performances, such as the background doping concentration, shape of the response spectra and the dark current behaviours.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
    Jianxin Chen
    Qingqing Xu
    Yi Zhou
    Jupeng Jin
    Chun Lin
    Li He
    Nanoscale Research Letters, 6
  • [42] Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
    Haddadi, A.
    Chevallier, R.
    Dehzangi, A.
    Razeghi, M.
    APPLIED PHYSICS LETTERS, 2017, 110 (10)
  • [43] Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
    Chen, Jianxin
    Xu, Qingqing
    Zhou, Yi
    Jin, Jupeng
    Lin, Chun
    He, Li
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [44] Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas
    Cui Yu-Rong
    Xu Zhi-Chang
    Huang Min
    Xu Jia-Jia
    Chen Jian-Xin
    He Li
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 40 (04) : 427 - 431
  • [45] Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector
    Li, Junbin
    Zhou, Xuchang
    Li, Dongsheng
    Mu, Yingchun
    Wang, Haipeng
    Cong, Shuren
    Ren, Yang
    Yang, Jin
    Chang, Chao
    Yang, Wen
    Li, Yanhui
    Kong, Jincheng
    OPTICAL AND QUANTUM ELECTRONICS, 2021, 53 (07)
  • [46] Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector
    Junbin Li
    Xuchang Zhou
    Dongsheng Li
    Yingchun Mu
    Haipeng Wang
    Shuren Cong
    Yang Ren
    Jin Yang
    Chao Chang
    Wen Yang
    Yanhui Li
    Jincheng Kong
    Optical and Quantum Electronics, 2021, 53
  • [47] Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range
    Wei, YJ
    Hood, A
    Yau, HP
    Gin, A
    Razeghi, M
    Tidrow, MZ
    Nathan, V
    APPLIED PHYSICS LETTERS, 2005, 86 (23) : 1 - 3
  • [48] Emerging Type-II Superlattices of InAs/InAsSb and InAs/GaSb for Mid-Wavelength Infrared Photodetectors
    Alshahrani, Dhafer O.
    Kesaria, Manoj
    Anyebe, Ezekiel A.
    Srivastava, V
    Huffaker, Diana L.
    ADVANCED PHOTONICS RESEARCH, 2022, 3 (02):
  • [49] Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
    Papis-Polakowska, E.
    Kaniewski, J.
    Jasik, A.
    Czuba, K.
    Sankowska, I
    Karbownik, P.
    Runka, T.
    Martynski, T.
    Makowiecki, J.
    Lapinski, A.
    APPLIED PHYSICS B-LASERS AND OPTICS, 2019, 125 (12):
  • [50] INAS-INASXSB1-X TYPE-II SUPERLATTICE MIDWAVE INFRARED-LASERS GROWN ON INAS SUBSTRATES
    ZHANG, YH
    MILES, RH
    CHOW, DH
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 749 - 756
12345