Study on Electrical Properties of Zinc Oxide Thin Film

被引：3
|
作者：
Halim, A. A. Abd [1 ]
Hashim, H. [1 ]
Rusop, M. [1 ]
Mamat, M. H. [1 ]
Zoolfakar, A. S. [1 ]
机构：
[1] Univ Teknol Mara UiTM, Dept Elect Engn, Shah Alam, Malaysia
来源：
2008 IEEE CONFERENCE ON INNOVATIVE TECHNOLOGIES IN INTELLIGENT SYSTEMS AND INDUSTRIAL APPLICATIONS | 2008年
关键词：
D O I：
10.1109/CITISIA.2008.4607347
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
This project focuses on the effect of annealing temperature to electrical properties of deposited Zinc Oxide (ZnO) thin film. ZnO solutions made from Zinc acetate dehydrate (ZnAC), 2-Methoxyethanol and monoethanolmine (MEA) are deposited onto glass substrates using spin coating technique. Deposited films are annealed at various temperatures from 350 degrees C to 500 degrees C in the furnace (Proterm Furnace) for 1 hour. The effect of annealing temperature on the electrical properties is investigated. The electrical properties are characterized using Current-Voltage (I-V) measurement unit (Advantest R6243). IN characterization shows the films exhibited ohmic contact and the resistivity decreased when annealing temperature increased. This indicates that the electrical properties of the films improved with higher annealing temperature up to 500 degrees C.
引用
收藏
页码：123 / +
页数：2
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