Laser Induced Annealing Dynamics of Photo-Electron Spectra from Silicon Field Emitter Arrays

被引：0
|
作者：
Keathley, Phillip D. [1 ]
Sell, Alexander [1 ,2 ]
Putnam, William P. [1 ]
Guerrera, Stephen
Velasquez-Garcia, Luis [3 ]
Kaertner, Franz X. [1 ,2 ]
机构：
[1] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Univ Hamburg, DESY & Dept Phys, Ctr Free Elect Laser Sci, D-22607 Hamburg, Germany
[3] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A marked increase in electron yield, an overall spectral red shift, and the formation of a higher energy peak from Si field emitter arrays (FEAs) are observed in photo-electron spectra throughout a laser annealing process.
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页数：2
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