Deposition of SiOx coatings by inductively coupled plasma: Effect of pulsed hexamethyldisiloxan flow

被引：7

作者：

Brochhagen, Markus ^{[1
]}

Chur, Sascha ^{[1
]}

Layes, Vincent ^{[1
]}

Boeke, Marc ^{[1
]}

Benedikt, Jan ^{[2
]}

机构：

[1] Ruhr Univ Bochum, Univ Str 150, D-44801 Bochum, Germany

[2] Christian Albrechts Univ Kiel, Leibnizstr 19, D-24118 Kiel, Germany

来源：

PLASMA PROCESSES AND POLYMERS | 2018年 / 15卷 / 04期

关键词：

HMDSO; ICP; PECVD; PET; thin films; OXYGEN PLASMA; ABSORPTION PROBE; ELECTRON-DENSITY; THIN-FILMS; BARRIER; SILICON; PECVD;

D O I：

10.1002/ppap.201700186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the deposition of SiOx films from O-2/hexamethyldisiloxan (HMDSO) or Ar/HMDSO mixtures in an inductively coupled plasma is investigated. Substrate temperature and electron density are measured during the deposition process. Furthermore, the deposited layers are analyzed with a profilometer (thickness), infrared absorption spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). Processes with continuous and pulsed HMDSO flows are compared to characterize the effect of surface treatment of a grown layer. Pure O-2 or Ar plasmas between the HMDSO gas flow pulses can offer a "post-oxidation" or "post-treatment" of the grown films. The discharge dynamics during the different phases are also investigated by time-resolved electron density measurements. This approach has led to formation of carbon and Si-OH group free SiOx films even without addition of O-2 gas under atmospheric pressure conditions.

引用

页数：11

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