Anomalous Bias Temperature Instability on Accumulation-Mode Ge and III-V MOSFETs

被引：0

作者：

Si, Mengwei ^{[1
]}

Wu, Heng ^{[1
]}

Shin, SangHoon ^{[1
]}

Luo, Wei ^{[1
]}

Conrad, Nathan J. ^{[1
]}

Wu, Wangran ^{[1
]}

Zhang, Jingyun ^{[1
]}

Alam, Muhammad A. ^{[1
]}

Ye, Peide D. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

Ge; InGaAs; reliability; BTI; Accumulation-mode MOSFETs; RELIABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report the observation of anomalous bias temperature instability (ABTI) phenomenon on InGaAs accumulation-mode nMOSFET with Al2O3 as dielectric and Ge accumulation-mode pMOSFET with Al2O3/GeO2 gate stack. During NBTI measurement on Ge accumulation-mode pMOSFETs and PBTI measurement on InGaAs accumulation-mode nMOSFETs, threshold voltage shifts to the opposite direction comparing with classic NBTI and PBTI phenomenon. A simple model is proposed to explain the experimental observation. It is understood that trap neutral level alignment and donor-like and acceptor-like traps generation and recovery are the origins of the ABTI behavior.

引用

页数：6

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