Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth

被引：7

作者：

Reentila, O ^{[1
]}

Mattila, M ^{[1
]}

Sopanen, M ^{[1
]}

Lipsanen, H ^{[1
]}

机构：

[1] Helsinki Univ Technol, Optoelect Labs, FIN-02015 Helsinki, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 02期

关键词：

in situ monitoring; metal-organic vapor phase epitaxy; quantum wells; dilute nitrides;

D O I：

10.1016/j.jcrysgro.2006.01.033

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metal-organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements. Correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established. The reflectance as a function of time also reveals if there is deterioration of the crystalline quality during growth. This method together with X-ray diffraction and photoluminescence characterization is applied to analyze GaAsN growth using various reactor pressures and TBAs/III molar flow ratios. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：345 / 349

页数：5

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