ESR and Raman studies of chemical bath deposited CdS: Ni films

被引:1
|
作者
Intatha, U. [1 ]
Eitssayeam, S. [2 ]
Pengpat, K. [2 ]
Udomkan, N. [3 ]
Limsuwan, P. [4 ]
Tunkasiri, T. [2 ]
机构
[1] Mae Fah Luang Univ, Sch Sci, Chianrai 57120, Thailand
[2] Chiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand
[3] Srinakharinwirot Univ, Dept Phys, Fac Sci, Bangkok 10110, Thailand
[4] King Mongkuts Univ Technol Thonburi, Dept Phys, Fac Sci, Bangkok 10140, Thailand
来源
MODERN PHYSICS LETTERS B | 2008年 / 22卷 / 22期
关键词
chemical bath deposition; Raman; ESR; Cd1-xNixS thin films;
D O I
10.1142/S0217984908016741
中图分类号
O59 [应用物理学];
学科分类号
摘要
The CdS : Ni films were fabricated on glass substrates by chemical bath deposition method (CBD), where Ni concentrations are 0%, 10%, 20%, 30% and 40%. X-ray diffractometry (XRD), Raman spectroscopy and electron spin resonance (ESR) were employed to study the film structures. The XRD patterns revealed the presence of cubic CdS and trace of NiS. The Raman spectra were observed at 300 and 600 cm(-1), corresponding to the first and second orders of the longitudinal optical phonon modes. Both results confirm that slightly lower order of crystallinity of CdS : Ni was found at the higher concentration on Ni. The ESR spectra showed the presence of F-type defects in CdS : Ni films. The band gaps of the samples were found to increase with the increase of Ni concentration.
引用
收藏
页码:2113 / 2121
页数:9
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