Theoretical studies of silicon carbide surfaces

Recent results on ab initio calculations of electronic and structural properties of SiC surfaces are reviewed. Particular attention is given to cubic SiC surfaces, and to the (0 0 1) plane of the cubic polytype, which is still open to controversy from both the theoretical and experimental side. Furthermore, new exciting evidence of self-aggregating low-dimensional structures has been reported, which is well characterized by first-principles simulations. Results on both stoichiometric and non-stoichiometric surface reconstructions for the cubic and hexagonal polytypes are presented, as well as some recent calculations regarding adsorption and initial stages of nitride and oxide growth on crystalline SiC. (C) 2002 Elsevier Science Ltd. All rights reserved.