Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

被引：9
|
作者：
Kim, JS [1 ]
Kawabe, M
Koguchi, N
Lee, DY
Kim, JS [1 ]
Bae, IH
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
[2] Samsung Electromech Co Ltd, Suwon 443743, South Korea
[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea
[4] Yeungnam Univ, Dept Phys, Kyongsan 712749, South Korea
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 26期
关键词：
D O I：
10.1063/1.2150582
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the structural and optical properties of InAs quantum dots (QDs) directly regrown on air-exposed and subsequent atomic hydrogen-cleaned (AHC) GaAs (001) surface. The average size of InAs QDs on the AHC GaAs surface is 29 nm, which is larger than 22 nm for the conventionally grown InAs QDs on GaAs. The integrated photoluminescence intensity of the InAs QDs on the AHC GaAs measured at room temperature is larger than that of the reference sample by two orders, even though the cleaned GaAs surface directly faced the base of the InAs QDs. The decrease in the interface states between the wetting layer and AHC GaAs was confirmed by Franz-Keldysh oscillations of the photoreflectance spectra. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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