Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner-Poisson model of the electronic transport and the two-current Mott's formula for the independent spin channels are applied to determine the current-voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current-voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current-voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode.