STM writing of artificial nanostructures in alkanethiol-type self-assembled monolayers

被引：11

作者：

Hartwich, J ^{[1
]}

Sundermann, M ^{[1
]}

Kleineberg, U ^{[1
]}

Heinzmann, U ^{[1
]}

机构：

[1] Univ Bielefeld, D-33615 Bielefeld, Germany

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

STM-lithography; SAM; e-beam lithography;

D O I：

10.1016/S0169-4332(98)00862-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the fabrication of artificial nanostructures in ultrathin resist films patterned by STM-lithography in ultrahigh vacuum ambience. A special type of resist, an alkanethiol-type Self-Assembled-Monolayer (SAM), has been patterned by an UHV-STM. The SAM patterns were investigated by STM without modifying the surface. Pattern width down to 15 nm were reproducibly achieved with 1 V bias voltage and 1 nA tip current. The SAM-films are formed spontaneously by immersing a Au(111)-single crystal or an appropriate gold-covered substrate into a 1 mM ethanolic solution of hexadecanthiol (CH3(CH2)(15)SH) for 24 h. The results show the capability of STM-lithography as an attractive alternative to conventional e-beam-lithography for the fabrication of lateral nanostructures in matter. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：538 / 542

页数：5

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