Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation

被引：72
|
作者：
Kim, In Soo [1 ]
Jeong, Eun-Kyung [1 ]
Kim, Do Yun [1 ]
Kumar, Manoj [1 ]
Choi, Se-Young [1 ]
机构：
[1] Yonsei Univ, Sch Mat Sci & Engn, Seoul 120749, South Korea
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 07期
关键词：
ZnO; Ag doping; Photoluminescence; p-Type; E-beam evaporation; HYDROGEN; PHOTOLUMINESCENCE; ULTRAVIOLET; EMISSION; NITROGEN; BULK;
D O I：
10.1016/j.apsusc.2008.10.117
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ag-doped ZnO (ZnO:Ag) thin films were grown on glass substrates by E-beam evaporation technique. The structural, electrical and optical properties of the. lms were investigated as a function of annealing temperature. The. lms were subjected to post annealing at different temperatures in the range of 350 650 degrees C in an air ambient. All the as grown and annealed. lms at temperature of 350 degrees C showed p-type conduction. The. lms lost p-type conduction after post annealing treatment temperature of above 350 degrees C, suggesting a narrow post annealing temperature window for the fabrication of p-type ZnO: Ag. lms. ZnO: Ag film annealed at 350 degrees C revealed lowest resistivity of 7.25 x 10(2) Omega cm with hole concentration and mobility of 5.09 x 10(19) cm(3) and 1.69 cm(2)/Vs, respectively. Observation of a free-to-neutral-acceptor (e, A degrees) and donor -acceptor-pair (DAP) emissions in the low temperature photoluminescence measurement confirms p-type conduction in the ZnO: Ag. lms. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：4011 / 4014
页数：4
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