A design of high-speed, full-swing bootstrapped BiCMOS dynamic circuit

被引：0
|
作者：
Dejhan, K [1 ]
Tooprakai, P [1 ]
Rojthongkham, P [1 ]
Soonyeekan, C [1 ]
机构：
[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Bangkok 10520, Thailand
来源：
2004 IEEE International Conference on Semiconductor Electronics, Proceedings | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a design of a bootstrapped BiCMOS dynamic circuit. The proposed circuit is high-speed and full-swing operation with 1.5 Volt single power supply. The driving sections are designed by using the noncomplementary technique based on BiCMOS technology. The bipolar pull up driving section is driven by bootstrapped CMOS circuit. The results have been carried out by using PSpice program simulator based on 0.35 mu m BiCMOS standard technology of MOSIS. All circuit performance has been compared with the previous results.
引用
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页码：72 / 75
页数：4
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