Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission

被引：16
|
作者：
Chen, Baile [1 ]
Holmes, A. L., Jr. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2013年 / 45卷 / 02期
关键词：
Mid-wavelength infrared (MWIR); Dilute nitride InGaAsN; GaAsSb; Type-II quantum well; Optical gain; BAND PARAMETERS;
D O I：
10.1007/s11082-012-9610-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical gain performance of InP based "W" structure with InGaAs(N)/GaAsSb type-II quantum wells are investigated theoretically. The band structure was calculated by using k.p model, taking into account the conduction band mixing with N resonant band, valence band mixing, as well as strain effect. Our studies show that these type-II quantum wells are suitable for mid-infrared (2-4 mu m) operation at room temperature.
引用
收藏
页码：127 / 134
页数：8
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