MBE growth optimization of InN nanowires

被引：86
|
作者：
Stoica, T [1 ]
Meijers, R
Calarco, R
Richter, T
Lüth, H
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, ISGI, D-52425 Julich, Germany
[2] Res Ctr Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 01期
关键词：
growth models; nanostructures; molecular beam epitaxy; nitrides;
D O I：
10.1016/j.jcrysgro.2005.12.106
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of InN using plasma-assisted MBE has been investigated within the parameter range of columnar growth to obtain uniform whiskers with a high crystalline quality. The column morphology and crystalline quality were investigated by scanning electron microscopy (SEM) and photoluminescence (PL), respectively. The PL peak energy varies in the range 0.76-0.82eV, while the peak intensity changes more than two orders of magnitude with the growth conditions. The PL intensity increases with column length and growth temperature. These findings suggest higher crystalline quality and less intrinsic doping at higher growth temperature. Columns grown at higher temperatures are very nonuniform in diameter. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：241 / 247
页数：7
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