Strontium ruthenium oxide deposition in supercritical carbon dioxide using a closed reactor system

被引：10

作者：

Jung, Kyubong ^{[1
]}

Momose, Takeshi ^{[1
]}

Shimogaki, Yukihiro ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF SUPERCRITICAL FLUIDS | 2013年 / 79卷

关键词：

Supercritical fluid deposition; Strontium; Ruthenium; SrRuO3; LOW-TEMPERATURE DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; FLUID DEPOSITION; CONFORMAL COPPER; TITANIUM-OXIDE; NICKEL FILMS; CO2; FABRICATION; SOLVATION;

D O I：

10.1016/j.supflu.2013.03.008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A SrRuO3 deposition process using supercritical fluid deposition (SCFD) was designed for fabricating electrodes in ferroelectric random access memory (FeRAM). To make stoichiometric SrRuO3 film (Sr:Ru = 1:1), deposition rates of component materials, SrO and RuO2, must be balanced, and thus, we investigated the deposition kinetics of the component materials. The deposition rate of SrO was found to be less than that of RuO2 in all cases, and SrO particle generation during deposition was problematic. Both of these issues could be overcome by controlling the temperature and O-2 concentration. For SrRuO3 deposition, the Sr-/Ru- precursor concentration ratio was the dominant factor to control the composition of the film. Stoichiometric SrRuO3 film can be formed by increasing the Sr-/Ru- precursor sconcentration ratio to 6. Our deposited film satisfied three major requirements for a FeRAM electrode: perovskite crystal structure, low resistivity, and conformal deposition onto the trenches (aspect ratio of 5). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：244 / 250

页数：7

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