Total ionizing dose effects in bipolar and BiCMOS devices

被引：0
|
作者：
Chavez, RM [1 ]
Rax, BG [1 ]
Scheick, LZ [1 ]
Johnston, AH [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
NSREC: 2005 IEEE Radiation Effects Data Workshop, Workshop Record | 2005年
关键词：
bipolar; complementary metal oxide semiconductor (CMOS); enhanced low dose rate sensitivity (ELDRS); low dose level (LDL); and total ionizing dose (TID);
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
This paper describes Total Ionizing Dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
引用
收藏
页码：144 / 148
页数：5
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