Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination

被引：21
|
作者：
Guo, N. [1 ]
Hu, W. D. [1 ]
Chen, X. S. [1 ]
Lei, W. [2 ]
Lv, Y. Q. [3 ]
Zhang, X. L. [3 ]
Si, J. J. [3 ]
Lu, W. [1 ]
机构：
[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
[3] Luoyang Optoelect Inst, Luoyang 471009, Henan, Peoples R China
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2013年 / 45卷 / 07期
基金：
中国国家自然科学基金;
关键词：
InSb Infrared focal plane arrays; Numerical simulation; Quantum efficiency; NUMERICAL-ANALYSIS; CROSSTALK;
D O I：
10.1007/s11082-012-9630-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths.
引用
收藏
页码：673 / 679
页数：7
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