On the origin of energy loss in single-electron tunneling devices

被引:0
|
作者
Hoekstra, J [1 ]
机构
[1] Delft Univ Technol, Elect Res Lab, Fac Informat Technol & Syst, NL-2628 CD Delft, Netherlands
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the loss of energy (dissipation) in single-electron tunneling (SET) devices is discussed It is argued that, just as in the case of the orthodox theory of single-electronics, when tunneling immediately occurs at the moment the charge at the tunnel junction reaches the critical charge no energy will be lost. However, due to the stochastic tunneling process, it is argued that as soon as the actual tunneling takes place after the critical charge on the tunnel capacitance is passed, energy is lost during the tunneling event. This loss of energy, E-t, is proportional to U-a + U-b, where U-a and U-b are the voltages over the junction just after and the voltage over the junction just before the tunnel event, respectively.
引用
收藏
页码:117 / 120
页数:4
相关论文
共 50 条
  • [41] Offset charge distribution in nanocluster-based single-electron tunneling devices
    Ohgi, Taizo
    Sakotsubo, Yukihiro
    Fujita, Daisuke
    Ootuka, Youiti
    LOW TEMPERATURE PHYSICS, PTS A AND B, 2006, 850 : 1440 - +
  • [42] Polyimide as a tunneling barrier in single-electron tunneling junctions
    Noguchi, Yutaka
    Manaka, Takaaki
    Iwamoto, Mitsumasa
    POLYIMIDES AND OTHER HIGH TEMPERATURE POLYMERS: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS, VOL 3, 2005, : 439 - 452
  • [43] Single-electron devices in silicon
    Schupp, Felix J.
    MATERIALS SCIENCE AND TECHNOLOGY, 2017, 33 (08) : 944 - 962
  • [44] Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices
    Lee, Youngmin
    Lee, So Hyun
    Son, Hyo Seok
    Lee, Sejoon
    NANOMATERIALS, 2022, 12 (04)
  • [45] Evidence for single-electron tunneling in electron energy spectra of diamond tip field emitter
    Kleshch, V. I.
    Obraztsov, A. N.
    Porshyn, V.
    Luetzenkirchen-Hecht, D.
    2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2018,
  • [46] ELECTRON PAIRING AND SINGLE-ELECTRON TUNNELING IN MESOSCOPIC SUPERCONDUCTORS
    TINKHAM, M
    PHYSICA B-CONDENSED MATTER, 1995, 204 (1-4) : 176 - 182
  • [47] SINGLE-ELECTRON TUNNELING IN SINGLE JUNCTIONS AND MULTIJUNCTION SYSTEMS
    DRESSELHAUS, PD
    JI, L
    HAN, SY
    LIN, K
    LUKENS, J
    LIKHAREV, KK
    PHYSICA B, 1994, 194 : 1335 - 1336
  • [48] Single-electron tunneling devices based on silicon quantum dots fabricated by plasma process
    Dutta, A
    Lee, SP
    Hayafune, Y
    Hatatani, S
    Oda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (01): : 264 - 267
  • [49] SINGLE-ELECTRON TUNNELING IN NANOMETER-SCALE DOUBLE-BARRIER HETEROSTRUCTURE DEVICES
    SU, B
    GOLDMAN, VJ
    CUNNINGHAM, JE
    PHYSICAL REVIEW B, 1992, 46 (12): : 7644 - 7655
  • [50] NONDIVERGENT CALCULATION OF UNWANTED HIGH-ORDER TUNNELING RATES IN SINGLE-ELECTRON DEVICES
    LAFARGE, P
    ESTEVE, D
    PHYSICAL REVIEW B, 1993, 48 (19): : 14309 - 14318