D-Band RF-MEMS SPDT Switch in a 0.13 μm SiGe BiCMOS Technology

被引：24

作者：

Wipf, Selin Tolunay ^{[1
]}

Goeritz, Alexander ^{[1
]}

Wietstruck, Matthias ^{[1
]}

Wipf, Christian ^{[1
]}

Tillack, Bernd ^{[1
,2
]}

Kaynak, Mehmet ^{[1
,3
]}

机构：

[1] IHP Microelect GmbH, D-15236 Frankfurt, Germany

[2] Tech Univ Berlin, D-10587 Berlin, Germany

[3] Sabanci Univ, TR-34956 Istanbul, Turkey

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 12期

关键词：

BiCMOS; mm-wave; RF-MEMS; single-pole double-throw (SPDT) switch;

D O I：

10.1109/LMWC.2016.2623245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a D-Band (110-170 GHz) RF-MEMS based Single-Pole Double-Throw (SPDT) switch fabricated in a 0.13 mu m SiGe BiCMOS technology. The on-wafer S-parameter measurements of the RF-MEMS based SPDT switch show beyond state of the art RF performances, 1.42 dB insertion loss and 54.5 dB isolation at 140 GHz. The SPDT switch consists of a tee junction connected to two Single-Pole Single-Throw (SPST) RF-MEMS switches. The RF-MEMS switch is actuated using 60 V actuation voltage and provides less than 10 mu s switch-on and switch-off times. To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a SPDT reported in D-band.

引用

页码：1002 / 1004

页数：3

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