New model for low-temperature oxidation of copper single crystal

被引：53

作者：

Fujita, Kensuke ^{[1
]}

Ando, Daisuke ^{[2
]}

Uchikoshi, Masahito ^{[1
]}

Mimura, Kouji ^{[1
]}

Isshiki, Minoru ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

来源：

APPLIED SURFACE SCIENCE | 2013年 / 276卷

关键词：

Low-temperature oxidation; Copper; Ellipsometry; Grain growth; LOGARITHMIC RATE LAW; THIN-FILMS; NICKEL-OXIDE; KINETICS; GROWTH; ELLIPSOMETRY; DIFFUSION; THICKNESS; METALS; SPECTROSCOPY;

D O I：

10.1016/j.apsusc.2013.03.096

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Low-temperature oxidation of a copper single crystal, Cu(1 1 1), was investigated using an in situ spectroscopic ellipsometer. The oxidation rate followed the cubic rate law at 5-25 nm oxide thickness; thus, the rate law of Cu single crystal oxidation depended on Cu oxide thickness. Furthermore, the activation energy was found to be close to that of grain boundary diffusion of metal ions in the oxide layer. These results could be explained by grain boundary diffusion and oxide grain growth. Thus, we verified that the low-temperature oxidation kinetics of copper depend on oxide grain growth. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：347 / 358

页数：12

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