Mechanical properties of GaxIn1-xAsyP1-y/GaAs system at different temperatures and pressures

被引:12
|
作者
Degheidy, A. R. [1 ]
Elkenany, E. B. [1 ]
机构
[1] Mansoura Univ, Fac Sci, Dept Phys, Mansoura, Egypt
关键词
elastic constants; temperature and pressure; electronic band gaps; ELASTIC-CONSTANTS; ELECTRONIC-PROPERTIES; BAND-STRUCTURE; DEPENDENCE; SEMICONDUCTORS; ALLOYS; GAP; INP; GE;
D O I
10.1088/1674-1056/24/9/094302
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The mechanical properties, such as the elastic constants C-11, C-12, C-44, and bulk, Young's, and shear moduli, of a GaxIn1-xAsyP1-y alloy lattice matching to a GaAs substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement, while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.
引用
收藏
页数:6
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