Influence of emitter-ledge thickness on the surface-recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

被引：0

作者：

Chu, Kuei-Yi ^{[2
]}

Cheng, Shiou-Ying ^{[1
]}

Chen, Tzu-Pin ^{[2
]}

Hung, Ching-Wen ^{[2
]}

Chen, Li-Yang ^{[2
]}

Tsai, Tsung-Han ^{[2
]}

Liu, Wen-Chau ^{[2
]}

Chen, Lu-An ^{[1
]}

机构：

[1] Nation Ilan Univ, Dept Elect Engn, I Lab 26041, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 43卷 / 04期

关键词：

emitter-ledge thickness; recombination rate; DC current gain;

D O I：

10.1016/j.spmi.2008.01.018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 A. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：368 / 374

页数：7

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