The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is of fundamental interest and has many applications in newly proposed devices. Using the mid-infrared, magneto-optical Kerr effect, we detect and identify over 18 interband cyclotron resonances (CR) that are associated with ABA and ABC stacked multilayers as well as monolayers that coexist in graphene that is epitaxially grown on 4H-SiC. Moreover, the magnetic field and photon energy dependence of these features enable us to explore the band structure, electron-hole band asymmetries, and mechanisms that activate a CR response in the Kerr effect for various multilayers that coexist in a single sample. Surprisingly, we find that the magnitude of monolayer Kerr effect CRs is not temperature dependent. This unexpected result reveals new questions about the underlying physics that makes such an effect possible.
机构:
Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, RussiaRussian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
Belotelov, V. I.
Zvezdin, A. K.
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Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, RussiaRussian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
机构:
RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Moscow MV Lomonosov State Univ, Moscow 119992, RussiaRAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Belotelov, V. I.
Bykov, D. A.
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RAS, Image Proc Syst Inst, Samara 443001, RussiaRAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Bykov, D. A.
Doskolovich, L. L.
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RAS, Image Proc Syst Inst, Samara 443001, RussiaRAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Doskolovich, L. L.
Kalish, A. N.
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RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Moscow MV Lomonosov State Univ, Moscow 119992, RussiaRAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Kalish, A. N.
Zvezdin, A. K.
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RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Univ Basque Country, Dept Mat Phys, Fac Chem, EHU, San Sabastian 20009, SpainRAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia