Low-dimensional semiconductors modeled by the first-order homogeneous electron gas theory

被引：0

作者：

Li, TL ^{[1
]}

机构：

[1] Natl Chia Yi Univ, Dept Appl Phys, Chiayi 600, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 02期

关键词：

first-order homogeneous electron gas (FOHEG); homogeneous electron gas (HEG); low-dimensional semiconductors;

D O I：

10.1143/JJAP.43.536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first-order homogeneous electron gas (FOHEG) theory was applied to ideal quantum confinement structures of various confinement dimensionalities to investigate the validity of the theory. It was found that the theory could be used for low-dimensional semiconductors with the confinement dimensionalities of 2 (quantum wires) and 3 (quantum dots).

引用

页码：536 / 537

页数：2

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