Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors

被引：47
|
作者：
MacDougal, MH
Yang, GM
Bond, AE
Lin, CK
Tishinin, D
Dapkus, PD
机构：
[1] Natl. Ctr. Intgd. Photonic Technol., Dept. of Elec. Eng./Electrophysics, University of Southern California, Los Angeles
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期
关键词：
D O I：
10.1109/68.481100
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region, They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's, We obtain threshold currents as low as 160 mu A in VCSEL's with an active area of 8 mu m x 8 mu m using a two quantum well InGaAs-GaAs active region, By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 mu A.
引用
收藏
页码：310 / 312
页数：3
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