In situ synthesis of homogeneously dispersed SiC nanowires in reaction sintered silicon-based ceramic powders

被引:36
|
作者
Chu, Yanhui [1 ]
Jing, Siyi [1 ]
Chen, Jikun [2 ]
机构
[1] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
关键词
In-situ synthesis; Nanowire; Silicon carbide; Ceramic powder; C/C COMPOSITES; CARBOTHERMAL REDUCTION; OXIDATION PROTECTION; GRAPHITE; GROWTH; CARBON; TEMPERATURE; FABRICATION; CATALYST; SIO2;
D O I
10.1016/j.ceramint.2018.01.080
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The synthesis of homogeneously dispersed SiC nanowires in the ceramic powders arouses considerable interests due to its potential applications as reinforcements in the ceramic matrix composites. Herein, we reported a facile and novel approach to in situ synthesize homogeneously dispersed SiC nanowires in the reaction sintered silicon based ceramic powders. The as-synthesized nanowires exhibited the single-crystalline 3C-SiC with diameters of 50-200 nm and lengths ranging from tens to over 100 mu m. Combining further experimental results and thermodynamics analysis, we demonstrated the importance of the free silicon for the in situ synthesis of SiC nano wires in the reaction sintered silicon-based ceramic powders, since it increased the equilibrium vapor pressure of SiO gaseous product in the system.
引用
收藏
页码:6681 / 6685
页数:5
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