All-dielectric metasurface for wavefront control at terahertz frequencies

被引:5
|
作者
Dharmavarapu, Raghu [1 ,2 ,3 ]
Ng, Soon Hock [1 ,3 ]
Bhattacharya, Shanti [2 ]
Juodkazis, Saulius [1 ,3 ]
机构
[1] Swinburne Univ Technol, Ctr Microphoton, Fac Sci Engn & Technol, Hawthorn, Vic 3122, Australia
[2] Indian Inst Technol Madras, Ctr NEMS & Nanophoton CNNP, Dept Elect Engn, Madras 600036, Tamil Nadu, India
[3] Victorian Node Australian Natl Fabricat Facil, Melbourne Ctr Nanofabricat, 151 Wellington Rd, Clayton, Vic 3168, Australia
来源
关键词
Metasurfaces; Beam shaping; Vortex beam; Terahertz; Silicon; VISIBLE WAVELENGTHS; HIGH-TRANSMISSION; POLARIZATION; REFLECTARRAY; RESOLUTION; PLATE;
D O I
10.1117/12.2283090
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, metasurfaces have gained popularity due to their ability to offer a spatially varying phase response, low intrinsic losses and high transmittance. Here, we demonstrate numerically and experimentally a silicon meta surface at THz frequencies that converts a Gaussian beam into a Vortex beam independent of the polarization of the incident beam. The metasurface consists of an array of sub-wavelength silicon cross resonators made of a high refractive index material on substrates such as sapphire and CaF2 that are transparent at IR-THz spectral range. With these substrates, it is possible to create phase elements for a specific spectral range including at the molecular finger printing around 10 pm as well as at longer THz wavelengths where secondary molecular structures can be revealed. This device offers high transmittance and a phase coverage of 0 to 2 pi. The transmittance phase is tuned by varying the dimensions of the meta-atoms. To demonstrate wavefront engineering, we used a discretized spiraling phase profile to convert the incident Gaussian beam to vortex beam. To realize this, we divided the metasurface surface into eight angular sectors and chose eight different dimensions for the crosses providing successive phase shifts spaced by pi/4 radians for each of these sectors. Photolithography and reactive ion etching (RIE) were used to fabricate these silicon crosses as the dimensions of these cylinders range up to few hundreds of micrometers. Large 1-cm-diameter optical elements were successfully fabricated and characterised by optical profilometry.
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收藏
页数:6
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