Passivation Effect of F plus Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS

被引：0
|
作者：
Horita, Susumu [1 ]
机构：
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
基金：
日本学术振兴会;
关键词：
INDUCED LATERAL CRYSTALLIZATION; PERFORMANCE; GROWTH;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Crystallized Si films are obtained on glass substrates covered with poly-YSZ layers at deposition temperature lower than without YSZ by over 100 degrees C. From the surface chemical analyses by XPS, we proposed that one F+Y monolayer formed on the chemically cleaned YSZ layer acts as a passivation layer to support Si crystallization. Crystallization model using F+Y monolayer can explain the YSZ yttrium content dependence of crystallization fraction of Si film quantitatively.
引用
收藏
页码：889 / 892
页数：4
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