Passivation Effect of F plus Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS

被引：0

作者：

Horita, Susumu ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

来源：

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年

基金：

日本学术振兴会;

关键词：

INDUCED LATERAL CRYSTALLIZATION; PERFORMANCE; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crystallized Si films are obtained on glass substrates covered with poly-YSZ layers at deposition temperature lower than without YSZ by over 100 degrees C. From the surface chemical analyses by XPS, we proposed that one F+Y monolayer formed on the chemically cleaned YSZ layer acts as a passivation layer to support Si crystallization. Crystallization model using F+Y monolayer can explain the YSZ yttrium content dependence of crystallization fraction of Si film quantitatively.

引用

页码：889 / 892

页数：4

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