Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies

被引：0
|
作者：
Kaule, Evelyne [1 ]
Doerner, Ralf [2 ]
Weimann, Nils [2 ,3 ]
Rudolph, Matthias [1 ,2 ]
机构：
[1] Brandenburg Univ Technol Cottbus Senftenberg BTU, Cottbus, Germany
[2] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany
[3] Univ Duisburg Essen, Duisburg, Germany
来源：
PROCEEDINGS OF THE 2020 GERMAN MICROWAVE CONFERENCE (GEMIC) | 2020年
关键词：
InP DHBT; noise; modeling; analysis; correlation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DHBTs). It is shown that the shot noise of these devices exhibits a pronounced correlation which allows for a reliable extrapolation of the noise performance based on standard noise measurement at lower frequencies, or even on the knowledge of small-signal model parameters alone.
引用
收藏
页码：52 / 55
页数：4
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