Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies

被引：0

作者：

Kaule, Evelyne ^{[1
]}

Doerner, Ralf ^{[2
]}

Weimann, Nils ^{[2
,3
]}

Rudolph, Matthias ^{[1
,2
]}

机构：

[1] Brandenburg Univ Technol Cottbus Senftenberg BTU, Cottbus, Germany

[2] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany

[3] Univ Duisburg Essen, Duisburg, Germany

来源：

PROCEEDINGS OF THE 2020 GERMAN MICROWAVE CONFERENCE (GEMIC) | 2020年

关键词：

InP DHBT; noise; modeling; analysis; correlation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DHBTs). It is shown that the shot noise of these devices exhibits a pronounced correlation which allows for a reliable extrapolation of the noise performance based on standard noise measurement at lower frequencies, or even on the knowledge of small-signal model parameters alone.

引用

页码：52 / 55

页数：4

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