Mo/Ti multilayer Bragg reflector for LiNbO3 film bulk acoustic wave resonators

被引:23
|
作者
Bai, Xiaoyuan [1 ]
Shuai, Yao [1 ]
Lv, Lu [1 ]
Huang, Shitian [1 ]
Xing, Ying [1 ]
Zhao, Jiaoling [2 ]
Luo, Wenbo [1 ]
Wu, Chuangui [1 ]
Yang, Tao [3 ]
Zhang, Wanli [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILMS; FBAR;
D O I
10.1063/5.0011954
中图分类号
O59 [应用物理学];
学科分类号
摘要
A 43 degrees rotated Y-cut LiNbO3 (LN) single-crystal thin film coated with a bottom electrode and a Mo/Ti Bragg reflector is successfully transferred onto the 4-in. LN wafer substrate by means of crystal-ion-slicing (CIS) technique and benzocyclobutene bonding method. The multilayer film is crack-free, and the Mo/Ti reflector shows good acoustic reflection efficiency. A thin film bulk acoustic wave resonator based on the Mo/Ti Bragg reflector and the LN thin film (LN-BAW) is prepared, and the properties are further analyzed. The results indicate that the LN-BAW provides a large K-t(2) of similar to 16.63% and the Q-factor and figure-of-merit of the LN-BAW reach 183 and 30.4, respectively.
引用
收藏
页数:5
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