共 50 条
- [11] Atomic layer chemical vapor deposition of hafnium oxide using anhydrous hafnium nitrate precursor SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 73 - 78
- [14] Chemical vapor deposition of copper thin film using a novel precursor of allyloxytrimethylsilyl hexafluoroacetylacetonate copper(I) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 4825 - 4828
- [15] Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (02): : 495 - 506
- [16] Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor Journal of Materials Research, 2004, 19 : 584 - 589
- [19] Chemical vapor deposition of high-k oxide films using novel anhydrous mental nitrates as precursors Gongneng Cailiao/Journal of Functional Materials, 2008, 39 (04): : 574 - 577
- [20] Low Temperature Chemical Vapor Deposition of Cuprous Oxide Thin Films Using a Copper(I) Amidinate Precursor ACS APPLIED ENERGY MATERIALS, 2019, 2 (11): : 7750 - 7756