Optical modulation with a resonant tunnelling diode

被引：2
|
作者：
McMeekin, SG [1 ]
Taylor, MRS [1 ]
Ironside, CN [1 ]
机构：
[1] UNIV GLASGOW,DEPT ELECT ENGN & ELECTR,GLASGOW G12 8LT,LANARK,SCOTLAND
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 1996年 / 143卷 / 01期
关键词：
optoelectronic modulation; Franz-Kelydsh effect; resonant tunnelling; optical waveguides;
D O I：
10.1049/ip-opt:19960084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of a resonant tunnelling diode buried in the centre of an optical waveguide to achieve optoelectronic modulation through the Franz-Kelydsh effect is demonstrated. The response of the modulator to both a pulsed and CW electrical signal is described in detail. It has been shown that owing to the nonlinear response of the RTD it is possible to switch the modulator with a 0.1V electrical pulse.
引用
收藏
页码：12 / 16
页数：5
相关论文
共 50 条
  • [21] A small signal equivalent circuit model for resonant tunnelling diode
    Ma Long
    Huang Ying-Long
    Zhang Yang
    Wang Liang-Chen
    Yang Fu-Hua
    Zeng Yi-Ping
    CHINESE PHYSICS LETTERS, 2006, 23 (08) : 2292 - 2295
  • [22] RESONANT TUNNELLING IN FILM OPTICAL WAVEGUIDES.
    Iogansen, L.V.
    Malov, V.V.
    1978, 23 (05): : 581 - 585
  • [23] High Frequency Resonant Tunnelling Diode Oscillator with High Output Power
    Wang, Jue
    Alharbi, Khalid
    Ofiare, Afesomeh
    Khalid, Ata
    Cumming, David
    Wasige, Edward
    MILLIMETRE WAVE AND TERAHERTZ SENSORS AND TECHNOLOGY VIII, 2015, 9651
  • [24] Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode
    Palla, Penchalaiah
    Uppu, Gopi Raja
    Ethiraj, Anita S.
    Raina, J. P.
    BULLETIN OF MATERIALS SCIENCE, 2016, 39 (06) : 1441 - 1451
  • [25] Waveguide-input resonant tunnelling diode mixer for THz communications
    Yu, X.
    Ohira, T.
    Kim, J. -Y.
    Fujita, M.
    Nagatsuma, T.
    ELECTRONICS LETTERS, 2020, 56 (07) : 342 - +
  • [26] Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode
    PENCHALAIAH PALLA
    GOPI RAJA UPPU
    ANITA S ETHIRAJ
    J P RAINA
    Bulletin of Materials Science, 2016, 39 : 1441 - 1451
  • [27] Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode
    Hendriks, AMPJ
    Magnus, W
    VandeRoer, TG
    SOLID-STATE ELECTRONICS, 1996, 39 (05) : 703 - 712
  • [28] Waveguide coupler for resonant-tunnelling diode oscillator at 420 GHz
    Matsumoto, H.
    Suzuki, S.
    Asada, M.
    Monnai, Y.
    ELECTRONICS LETTERS, 2019, 55 (03) : 140 - +
  • [29] Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode
    Leung, CSY
    Skellern, DJ
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 263 - 266
  • [30] Integration of a resonant tunnelling diode and a quantum well laser: Model and experiment
    Slight, Thomas J.
    Ironside, Charles N.
    2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, 2006, : 160 - 163
12345