LPE growth method possibilities in A3B5 semiconductors preparation

被引：0
|
作者：
Nohavica, D
机构：
[1] Inst. of Radio Eng. and Electronics, Acad. Sci. CR, Chaberská 57
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1997年 / 47卷 / 07期
关键词：
D O I：
10.1023/A:1021230617028
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Pre-diffusion limited technique of Liquid phase epitaxy is used for preparation of quaternary solid solution GaxIn1-xAsyP1-y and binary InP. Surface morphology of the layers prepared at this condition has been compared with those prepared by conventional LPE. Quaternary strained layers with composition near to Ga0.21In0.79As0.75P0.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.
引用
收藏
页码：699 / 705
页数：7
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