Neutron irradiation effects in PZ and PZT thin films

被引:2
|
作者
Bittner, R
Humer, K [1 ]
Weber, HW
Kundzins, K
Sternberg, A
Lesnyh, DA
Kulikov, DV
Trushin, YV
机构
[1] Austrian Univ, Inst Atom, Vienna, Austria
[2] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
[3] RAS, AF Ioffe PTI, St Petersburg, Russia
关键词
neutron irradiation; antiferroelectric PbZrO3 films; ferroelectric PZT films; oxygen-vacancies; radiation-induced charges;
D O I
10.1080/10584580500312768
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) and ferroelectric PbZr0.53Ti0.47O3 (PZT) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. All investigated thin films were prepared by a sol-gel technique and by pulsed laser deposition (PLD) respectively. The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at temperatures up to 400 C, prior to and after irradiation to a neutron fluence of 3 (*) 10(22) m(-2) (E > 0.1 MeV). After irradiation, the films were anneald in several steps up to 400 C in order to remove the radiation-induced defects. The results are discussed in terms of two kinds of radiation-induced defects, i.e. structural defects, such as oxygen-vacancies, and radiation-induced charges. We find that the antiferroelectric PZ heterostructures are radiation harder than the PZT films and that the structural order of the film as well as the interfaces play an important role.
引用
收藏
页码:47 / 51
页数:5
相关论文
共 50 条
  • [1] Neutron irradiation effects on sol-gel PZT thin films
    Kundzins, K
    Zauls, V
    Kundzins, M
    Sternberg, A
    Cakare, L
    Bittner, R
    Humer, K
    Weber, HW
    FERROELECTRICS, 2001, 258 (1-4) : 285 - 290
  • [2] NEUTRON-IRRADIATION EFFECTS ON PZT THIN-FILMS FOR NONVOLATILE-MEMORY APPLICATIONS
    MOORE, RA
    BENEDETTO, JM
    MCGARRITY, JM
    MCLEAN, FB
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1078 - 1082
  • [3] Dielectric analysis of PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique
    Bae, Se-Hwan
    Jeon, Kie-Beom
    Jin, Byung-Moon
    Kim, Ill-Won
    Ferroelectrics, 2001, 260 (01) : 113 - 118
  • [4] Dielectric analysis of PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique
    Bae, SH
    Jeon, KB
    Jin, BM
    Kim, IW
    FERROELECTRICS, 2001, 260 (1-4) : 457 - 462
  • [5] Effects of neutron irradiation on magnesium diboride thin films
    Ferrando, V.
    Pallecchi, I.
    Tarantini, C.
    Putti, M.
    Aebersold, H. U.
    Lehmann, E.
    Orgiani, P.
    Tumino, A.
    Xi, X. X.
    Ferdeghini, C.
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2007, 17 (02) : 2858 - 2861
  • [6] Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature
    Yang, F.
    Chen, J. Y.
    Hou, M. Z.
    Cao, Y. F.
    Zhang, Y.
    Li, X. F.
    Zhang, X. Q.
    Hu, Y. C.
    Shang, J.
    Yin, S. Q.
    Wang, X. W.
    PHYSICA SCRIPTA, 2024, 99 (06)
  • [7] EFFECTS OF FAST-NEUTRON IRRADIATION ON NICKEL THIN FILMS
    TEODORESCU, I
    GLODEANU, A
    PHYSICAL REVIEW LETTERS, 1960, 4 (05) : 231 - 232
  • [8] A study of enhanced memory effect in PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique
    Bae, SH
    Jeon, KB
    Jin, BM
    FERROELECTRICS, 2005, 328 : 9 - 13
  • [9] Influence of irradiation on the switching behavior in PZT thin films
    Baturin, I
    Menou, N
    Shur, V
    Muller, C
    Kuznetsov, D
    Hodeau, JL
    Sternberg, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 120 (1-3): : 141 - 145
  • [10] Structure and C-V characteristics of PZ/PZT multilayer thin films (in PZ/PZT series sequences) prepared by sol-gel technique
    Bae, SH
    Jeon, KB
    Kim, SC
    Jin, BM
    FERROELECTRICS, 2001, 260 (1-4) : 475 - 480