Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

被引：15

作者：

Woo, Jiyong ^{[1
]}

Lee, Daeseok ^{[1
]}

Cha, Euijun ^{[1
]}

Lee, Sangheon ^{[1
]}

Park, Sangsu ^{[2
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 20期

关键词：

DENSITY;

D O I：

10.1063/1.4831680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (J(MAX) > 10(7) A/cm(2)) and better off-current (I-OFF < 100 nA) can be achieved. (C) 2013 AIP Publishing LLC.

引用

页数：4

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