共 50 条
- [31] The effect of In segregation on the PLE spectra of InxGa1-xAs/GaAs multiple quantum wells PHYSICA SCRIPTA, 1999, T79 : 111 - 115
- [33] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS PHYSICAL REVIEW B, 1989, 39 (08): : 5531 - 5534
- [34] Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells PHYSICAL REVIEW B, 1996, 53 (15): : 10116 - 10120
- [36] Optical characterization of highly strained InXGa1-XAs/GaAs single quantum wells SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 146 - 150
- [38] Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 305 - 312