FEM ANALYSIS OF GaN BASED SURFACE ACOUSTIC WAVE RESONATORS

被引：0

作者：

Stefanescu, A. ^{[1
]}

Muller, A. ^{[1
]}

Dinescu, A. ^{[1
]}

Konstantinidis, G. ^{[2
]}

Cismaru, A. ^{[1
]}

Stavrinidis, A. ^{[2
]}

Neculoiu, D. ^{[1
]}

机构：

[1] IMT Bucharest, 126A 32B,Erou Iancu Nicolae Str, Bucharest 077190, Romania

[2] FORTH IESL MRG Herakl, Iraklion, Greece

来源：

2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 | 2011年

关键词：

surface acoustic waves (SAW); FEM simulation; E-beam nanolithography;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.

引用

页码：177 / 180

页数：4

共 50 条

[21] BISTABLE SURFACE ACOUSTIC-WAVE RESONATORS
FIELD, ME
CHEN, CL
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1979, 26 (02): : 153 - 153
[22] Surface acoustic wave resonators in the quantum regime
Manenti, R.
Peterer, M. J.
Nersisyan, A.
Magnusson, E. B.
Patterson, A.
Leek, P. J.
PHYSICAL REVIEW B, 2016, 93 (04)
[23] COUPLED SURFACE-ACOUSTIC-WAVE RESONATORS
CROSS, PS
SCHMIDT, RV
BELL SYSTEM TECHNICAL JOURNAL, 1977, 56 (08): : 1447 - 1482
[24] UHF SURFACE ACOUSTIC-WAVE RESONATORS
STAPLES, EJ
ROSENFELD, RC
HARTMANN, CS
SCHOENWALD, JS
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1975, SU22 (03): : 218 - 219
[25] Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Yu, Guofang
Liang, Renrong
Zhao, Haiming
Xiao, Lei
Cui, Jie
Zhao, Yue
Cui, Wenpu
Wang, Jing
Xu, Jun
Fu, Jun
Ren, Tianling
SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (02)
[26] Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Guofang YU
Renrong LIANG
Haiming ZHAO
Lei XIAO
Jie CUI
Yue ZHAO
Wenpu CUI
Jing WANG
Jun XU
Jun FU
Tianling REN
Science China(Information Sciences), 2024, 67 (02) : 267 - 278
[27] CHARACTERISTICS OF SURFACE ACOUSTIC-WAVE RESONATORS OBTAINED FROM CAVITY ANALYSIS
COLDREN, LA
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1977, 24 (03): : 212 - 217
[28] Phase Noises of GaN-Based Surface Acoustic Wave Oscillator
Miskinis, Rimantas
Urba, Emilis
Smirnov, Dmitrij
Sereika, Albertas
Rimeika, Romualdas
2013 JOINT EUROPEAN FREQUENCY AND TIME FORUM & INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (EFTF/IFC), 2013, : 179 - +
[29] Mass sensitivity analysis and designing of surface acoustic wave resonators for chemical sensors
Kshetrimayum, Roshan
Yadava, R. D. S.
Tandon, R. P.
MEASUREMENT SCIENCE AND TECHNOLOGY, 2009, 20 (05)
[30] GaN-based surface acoustic wave filters for wireless communications
Petroni, S
Tripoli, G
Combi, C
Vigna, B
De Vittorio, M
Todaro, MT
Epifani, G
Cingolani, R
Passaseo, A
SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) : 825 - 831

← 1 2 3 4 5 →