FEM ANALYSIS OF GaN BASED SURFACE ACOUSTIC WAVE RESONATORS

被引：0
|
作者：
Stefanescu, A. [1 ]
Muller, A. [1 ]
Dinescu, A. [1 ]
Konstantinidis, G. [2 ]
Cismaru, A. [1 ]
Stavrinidis, A. [2 ]
Neculoiu, D. [1 ]
机构：
[1] IMT Bucharest, 126A 32B,Erou Iancu Nicolae Str, Bucharest 077190, Romania
[2] FORTH IESL MRG Herakl, Iraklion, Greece
来源：
2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 | 2011年
关键词：
surface acoustic waves (SAW); FEM simulation; E-beam nanolithography;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.
引用
收藏
页码：177 / 180
页数：4
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