Direct synthesis of B-C-N single-walled nanotubes by bias-assisted hot filament chemical vapor deposition

被引：161
|
作者：
Wang, W. L.
Bai, X. D.
Liu, K. H.
Xu, Z.
Golberg, D.
Bando, Y.
Wang, E. G. [1 ]
机构：
[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan
[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[4] Natl Inst Mat Sci, Nanomat Labs, Tsukuba, Ibaraki 3050044, Japan
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 20期
关键词：
D O I：
10.1021/ja0606733
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Direct synthesis of large-scale ternary boron carbonitride single-walled nanotubes (BCN-SWNTs) via a bias-assisted HFCVD process was presented. The BCN-SWNTs were grown over the powdery Fe-Mo/MgO catalyst by using CH4, B2H6, and ethylenediamine vapor as the reactant gases. As high as 16 atom % nitrogen can be incorporated within the nanotube shells, with the boron content in the range of 2-4 atom %. The ternary covalent bonding nature of the BCN-SWNTs was well characterized, and the B, C, and N elemental maps were clearly imaged by energy-filtered transmission electron microscopy. Copyright © 2006 American Chemical Society.
引用
收藏
页码：6530 / 6531
页数：2
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