Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?

被引：0

作者：

Lyttleton, R. ^{[1
]}

Muhieddine, K. ^{[1
]}

Anthony, J. E. ^{[2
]}

Micolich, A. P. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年

基金：

澳大利亚研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solvent annealing is a well-known method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.

引用

页码：193 / +

页数：2

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