Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators

被引：9
|
作者：
Hegyi, Barnabas [1 ]
Csurgay, Arpad [1 ]
Porod, Wolfgang [2 ]
机构：
[1] Pter Pazmany Catholic Univ, Fac Informat Technol, H-1083 Budapest, Hungary
[2] Univ Notre Dame, Dept Elect Engn, Ctr Nano Sci & Technol, Notre Dame, IN 46556 USA
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2007年 / 6卷 / 1-3期
基金：
匈牙利科学研究基金会;
关键词：
MIM diode; Tunneling theory; Computer simulation; DC I-V characteristics; Double insulator layer;
D O I：
10.1007/s10825-006-0083-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double insulator layer is investigated by means of computer simulations. Simulation results on the properties of the diode characteristics such as resistance and quality factor are presented in various diagrams and the dependences on the different diode parameters are discussed. The simulations algorithm applied is also described in brief.
引用
收藏
页码：159 / 162
页数：4
相关论文
共 28 条
  • [21] Abnormal I-V characteristics and metal-insulator transition of Fe-doped amorphous carbon/silicon p-n junction
    Hao, Lanzhong
    Xue, Qingzhong
    Gao, Xili
    Li, Qun
    Zheng, Qingbin
    Yan, Keyou
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [22] Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2 and Cr2O3 as insulator layer for energy harvesting applications
    Inac, Mesut
    Shafique, Atia
    Ozcan, Meric
    Gurbuz, Yasar
    THIN FILMS FOR SOLAR AND ENERGY TECHNOLOGY VII, 2015, 9561
  • [23] Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination
    Munir, T.
    Aziz, A. A.
    Abdullah, M. J.
    Ain, M. F.
    INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007, 2010, 1217 : 489 - +
  • [24] Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications
    Kim, Min-Kyu
    Kim, Woo-Hee
    Lee, Taeyoon
    Kim, Hyungjun
    THIN SOLID FILMS, 2013, 542 : 71 - 75
  • [25] Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal-insulator-semiconductor) Schottky diodes using I-V characteristics in a wide temperature range
    Pur, F. Z.
    Tataroglu, A.
    PHYSICA SCRIPTA, 2012, 86 (03)
  • [26] Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications
    Liu, WC
    Laih, LW
    Lour, WS
    Tsai, JH
    Lin, KW
    Cheng, CC
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (09) : 1615 - 1619
  • [27] COMPARISON OF THE ELECTRICAL CHARACTERISTICS OF SI METAL-INSULATOR-SEMICONDUCTOR TUNNEL-DIODES WITH INTERFACIAL LAYER GROWN BY RAPID THERMAL-OXIDATION OF SI IN O-2 AND IN N2O
    EFTEKHARI, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 390 - 393
  • [28] I-V characteristics of the GdBa2Cu3O7-x/YBa2Cu3O7-δ double-layer micro-structures prepared by self-sensitive chemical modification method
    Jia, Jiqiang
    Liu, Chen
    Guo, Mengjiao
    Han, Yu
    Ren, Yang
    Liu, Ding
    Zhao, Gaoyang
    CERAMICS INTERNATIONAL, 2021, 47 (22) : 32068 - 32074
123