Dielectric properties of BaTiO3 films with SiO layers formed by direct deposition on Si substrates using low-energy oxygen-ion beams

被引：1

作者：

Yokota, K ^{[1
]}

Takeda, A ^{[1
]}

Kawasaki, Y ^{[1
]}

Nakamura, K ^{[1
]}

机构：

[1] Kansai Univ, Fac Engn, Suita, Osaka 5648680, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 12期

关键词：

BaTiO3; thin film; ion beam assisted deposition; silicon oxide; permittivity;

D O I：

10.1143/JJAP.44.8544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaTiO3 thin films (< 200nm) were directly deposited on Si wafers using an oxygen-ion-beam-assisted deposition technique. Si surfaces were oxidized during the deposition. The thicknesses of the formed SiO2 layers were proportional to the ion beam current and were almost independent of the ion beam energy and the N-2 flux. The BaTiO3 films with thin SiO2 layers (20 nm) had larger remanent polarizations (similar to 2 mu C/cm(2)) than the BaTiO3 films with thick SiO2 layers (25 nm). Many prepared films had a coercive field of about 50 kV/cm.

引用

页码：8544 / 8546

页数：3

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